ZXTN4004K Datasheet, PDF (2/5 Pages) Diodes Incorporated – 150V NPN LED DRIVING TRANSISTOR IN TO252

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Diodes Incorporated
ZXTN4004K
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 4)
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Value
150
150
7
1
3
500
Unit
V
V
V
A
A
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 3)
(Note 3)
(Note 5)
Symbol
P_D
R_θJA
R_θJL
T_J, T_STG
Value
3.8
33
12
-55 to +150
Notes:
3. For a device surface mounted on 50mm X 50mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
5. Thermal resistance from junction to solder-point (on the exposed collector pad).
Unit
W
°C/W
°C/W
°C
Thermal Characteristics and Derating Information
35
T =25°C
30
amb
25
20 D=0.5
15
10 ^D=0.2
5
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
Single Pulse
T =25°C
100
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXTN4004K
Document Number: DS35458 Rev: 1 - 2
2 of 5
www.diodes.com
December 2011
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