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| ZXTD2090E6 Datasheet, PDF (3/6 Pages) Diodes Incorporated – DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR | |||
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A Product Line of
Diodes Incorporated
ZXTD2090E6
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter Cutoff Current
DC Current Gain (Note 8)
Symbol
Min
V(BR)CBO
50
V(BR)CEO
50
V(BR)EBO
5
ICBO
ICES
IEBO
200
300
hFE
200
75
20
Collector-Emitter Saturation Voltage (Note 8)
VCE(SAT)
Base-Emitter Saturation Voltage (Note 8)
Base-Emitter Turn-On Voltage (Note 8)
Output Capacitance
VBE(sat)
VBE(ON)
Cobo
Current Gain-Bandwidth Product
fT
Turn-On Time
ton
Turn-Off Time
toff
Notes: 8. Measured under pulsed conditions. Pulse width ⤠300 µs. Duty cycle ⤠2%
Typ Max
10
10
10
420
450
350
130
60
24
35
60
80
120 200
160 270
940 1100
850 1100
10
215
150
425
Unit
V
V
V
nA
nA
ï nA
mV
mV
mV
mV
mV
mV
pF
MHz
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB = 40V
VCES = 40V
VEB = 4V
IC = 10mA, VCE = 2V
IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 1.5A, VCE = 2V
IC = 100mA, IB = 10mA
IC = 250mA, IB = 10mA
IC = 500mA, IB = 10mA
IC = 1A, IB = 50mA
IC = 1A, IB = 50mA
IC = 1A, VCE = 2V
VCB = 10V. f = 1MHz
VCE = 10V, IC = 50mA
f = 100MHz
VCC = 10V, IC = 1A
IB1 = -IB2 = 100mA
ZXTD2090E6
Document Number DS31896 Rev. 2 - 2
3 of 6
www.diodes.com
August 2009
© Diodes Incorporated
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