ZXTD2090E6 Datasheet, PDF (2/6 Pages) Diodes Incorporated – DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

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Diodes Incorporated
ZXTD2090E6
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 5)
Base current
Peak Pulse Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
I_CM
Value
50
50
5
1
200
2
Unit
V
V
V
A
mA
A
Thermal Characteristics
Characteristic
Power Dissipation at T_A = 25°C (Notes 3 & 6)
Linear derating factor
Power Dissipation at T_A = 25°C (Notes 3 & 7)
Linear derating factor
Power Dissipation at T_A = 25°C (Notes 4 & 6)
Linear derating factor
Thermal Resistance, Junction to Ambient (Notes 3 & 6)
Thermal Resistance, Junction to Ambient (Notes 4 & 6)
Thermal Resistance, Junction to Ambient (Notes 3 & 7)
Operating and Storage Temperature Range
Symbol
P_D
P_D
P_D
R_θJA
R_θJA
R_θJA
T_J, T_STG
Value
0.90
7.2
1.1
8.8
1.7
13.6
139
73
113
-55 to +150
Notes:
3. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
4. For a device surface mounted on FR4 PCB measured at < 5sec
5. Repetitive rating – pulse width limited by maximum junction temperature. Refer to transient thermal impedance graph
6. For a device with one active die
7. For a device with two die running at equal power
Unit
W
mW /°C
W
mW /°C
W
mW /°C
°C/W
°C/W
°C/W
°C
ZXTD2090E6
Document Number DS31896 Rev. 2 - 2
2 of 6
www.diodes.com
August 2009
© Diodes Incorporated