ZTX604_15 Datasheet, PDF (3/3 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS

ZTX604
ZTX605
TYPICAL CHARACTERISTICS
1.8
-55°C
1.6
+25°C
+100°C
1.4
+175°C
1.2
IC/IB=100
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
1
10
IC - Collector Current (Amps)
VCE(sat) v IC
2.5
-55°C
+25°C
+100°C
2.0
1.5
1.0
0.5
VCE=5V
0.001
0.01
0.1
1
10
IC - Collector Current (Amps)
hFE v IC
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
-55°C
+25°C
+100°C
+175°C
IC/IB=100
0.01
0.1
1
10
IC - Collector Current (Amps)
VBE(sat) v IC
Single Pulse Test at Tamb=25°C
2.2
-55°C
2.0
+25°C
+100°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.01
0.1
VCE=5V
1
10
IC - Collector Current (Amps)
VBE(on) v IC
1.0
D.C.
1s
100ms
10ms
0.1
1.0ms
100µs
ZTX604
0.01
1
ZTX605
10
100
VCE - Collector Voltage (Volts)
Safe Operating Area
1000
3-214