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| ZTX604_15 Datasheet, PDF (1/3 Pages) Diodes Incorporated – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS | |||
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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 Â MARCH 94
FEATURES
* 120 Volt VCEO
* 1 Amp continuous current
* Gain of 2K at IC=1 Amp
* Ptot= 1 Watt
ZTX604
ZTX605
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL ZTX604 ZTX605
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at Tamb=25°C
derate above 25°C
VCBO
VCEO
VEBO
ICM
IC
Ptot
120
140
100
120
10
4
1
1
5.7
V
V
V
A
A
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX604
ZTX605 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
V(BR)CBO 120
140
V
IC=100µA
Breakdown Voltage
Collector-Emitter
V(BR)CEO 100
120
V
IC=10mA*
Breakdown Voltage
Emitter-Base
V(BR)EBO 10
10
V
IE=100µA
Breakdown Voltage
Collector Cut-Off
ICBO
Current
Emitter Cut-Off
IEBO
Current
0.01
10
0.1
µA
0.01 µA
µA
10
µA
0.1 µA
VCB=100V
VCB=120V
VCB=100V,Tamb=100°C
VCB=120V,Tamb=100°C
VEB=8V
Colllector-Emitter
ICES
Cut-Off Current
10
µA
VCES=100V
10
VCES=120V
Collector-Emitter
VCE(sat)
1.0
1.0 V
IC=250mA, IB=0.25mA*
Saturation Voltage
1.5
1.5 V
IC=1A, IB=1mA*
Base-Emitter
VBE(sat)
1.8
1.8 V
IC=1A, IB=1mA*
Saturation Voltage
Base-Emitter
VBE(on)
1.7
1.7 V
IC=1A, VCE=5V*
Turn-On Voltage
3-212
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