MMBT2222A_08 Datasheet, PDF (3/4 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT2222A
0.5
I_C
I_B ^{= 10}
0.4
0.3
0.2
T_A = 25°C
T_A = 150°C
0.1
T_A = -50°C
0
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
35
f = 1MHz
30
1.0
0.9 ^{VCE = 5V}
0.8
T_A = -50°C
0.7
T_A = 25°C
0.6
0.5
T_A = 150°C
0.4
0.3
0.2
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 4 Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
V_CE = 5V
25
20
C_ibo
15
10
5
C_obo
0
0 2 4 6 8 10 12 14 16 18 20
V_R, REVERSE VOLTS (V)
Fig. 5 Typical Capacitance Characteristics
100
10
1
1
2.0
1.8
I_C = 1mA
I_C = 30mA
1.6
I_C = 10mA
I_C = 100mA
1.4
1.2
I_C = 300mA
1.0
0.8
0.6
0.4
0.2
0
0.001 0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Fig. 7 Typical Collector Saturation Region
MMBT2222A
Document number: DS30041 Rev. 12 - 2
3 of 4
www.diodes.com
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Gain Bandwidth Product
vs. Collector Current
September 2008
© Diodes Incorporated