MMBT2222A_08 Datasheet, PDF (2/4 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

MMBT2222A
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic (Note 4)
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
Min
Max
75
⎯
40
⎯
6.0
⎯
Collector Cutoff Current
I_CBO
⎯
10
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Current Gain-Bandwidth Product
I_CEX
I_EBO
I_BL
h_FE
V_CE(SAT)
V_BE(SAT)
C_obo
C_ibo
f_T
⎯
10
⎯
10
⎯
20
35
⎯
50
⎯
75
⎯
100
300
40
⎯
50
⎯
35
⎯
⎯
0.3
1.0
0.6
1.2
⎯
2.0
⎯
8
—
25
300
⎯
Noise Figure
SWITCHING CHARACTERISTICS
Delay Time
NF
⎯
4.0
t_d
⎯
10
Rise Time
t_r
⎯
25
Storage Time
t_s
Fall Time
t_f
Notes: 4. Short duration pulse test used to minimize self-heating effect.
⎯
225
⎯
60
Unit
Test Condition
V I_C = 10μA, I_E = 0
V I_C = 10mA, I_B = 0
V I_E = 10μA, I_C = 0
nA V_CB = 60V, I_E = 0
μA V_CB = 60V, I_E = 0, T_A = 150°C
nA V_CE = 60V, V_EB(OFF) = 3.0V
nA V_EB = 3.0V, I_C = 0
nA V_CE = 60V, V_EB(OFF) = 3.0V
I_C = 100μA, V_CE = 10V
I_C = 1.0mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
⎯ I_C = 150mA, V_CE = 10V
I_C = 500mA, V_CE = 10V
I_C = 10mA, V_CE = 10V, T_A = -55°C
I_C = 150mA, V_CE = 1.0V
V ^{IC = 150mA, IB = 15mA}
I_C = 500mA, I_B = 50mA
V ^{IC = 150mA, IB = 15mA}
I_C = 500mA, I_B = 50mA
pF
pF
MHz
dB
V_CB = 10V, f = 1.0MHz, I_E = 0
V_EB = 0.5V, f = 1.0MHz, I_C = 0
V_CE = 20V, I_C = 20mA,
f = 100MHz
V_CE = 10V, I_C = 100μA,
R_S = 1.0kΩ, f = 1.0kHz
ns ^{VCC = 30V, IC = 150mA,}
V_BE(off) = - 0.5V, I_B1 = 15mA
ns ^{VCC = 3.0V, IC = 150mA, IB1 = 15mA,}
V_BE(OFF) = 0.5V
ns ^{VCC = 30V, IC = 150mA,}
I_B1 = I_B2 = 15mA
ns V_CC = 30V, I_C = 150mA, I_B1 = I_B2 = 15mA
400
350
Note 1
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1,000
T_A = 125°C
100
T_A = -25°C
T_A = 25°C
10
V_CE = 1.0V
1
0.1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
MMBT2222A
Document number: DS30041 Rev. 12 - 2
2 of 4
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September 2008
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