MMBD5004S Datasheet, PDF (3/4 Pages) Diodes Incorporated – HIGH VOLTAGE DUAL SWITCHING DIODE

1,000
100
10
T_J = 150°C
T_J = 125°C
1
T_J = 85°C
0.1
0.01
T_J = 25°C
T_J = -55°C
0.001
0 50 100 150 200 250 300 350 400
V_R, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics, Per Element
Package Outline Dimensions
A
BC
H
K
M
K1
D
JF
G
L
Suggested Pad Layout
MMBD5004S
0.62
0.59
0.56
0.53
0.50
0.1
1
10
100
V_R, DC REVERSE VOLTAGE (V)
Fig. 4 Total Capacitance
vs. Reverse Voltage, Per Element
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1
-
- 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α
0°
8°
-
All Dimensions in mm
Y
Z
C
X
E
Dimensions
Z
X
Y
C
E
Value (in mm)
2.9
0.8
0.9
2.0
1.35
MMBD5004S
Document number: DS30832 Rev. 8 - 2
3 of 4
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May 2011
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