MMBD5004S Datasheet, PDF (2/4 Pages) Diodes Incorporated – HIGH VOLTAGE DUAL SWITCHING DIODE

MMBD5004S
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V_RRM
400
V
Working Peak Reverse Voltage
DC Blocking Voltage
V_RWM
350
V
V_R
RMS Reverse Voltage
V_R(RMS)
247
V
Forward Continuous Current (Note 4)
I_F
300
mA
Peak Repetitive Forward Current (Note 4)
I_FRM
625
mA
Non-Repetitive Peak Forward Surge Current
@ t = 1.0μs
@ t = 1.0ms
I_FSM
5
3
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 4) (See figure 1)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J , T_STG
Value
350
357
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Reverse Current (Note 5)
Total Capacitance
Reverse Recovery Time
Symbol Min
V_(BR)R
400
V_F
⎯
I_R
⎯
C_T
⎯
t_rr
⎯
Typ
Max
Unit
Test Condition
⎯
⎯
V I_R = 150μA
⎯
0.9
I_F = 20mA
⎯
1.05
V I_F = 100mA
⎯
1.275
I_F = 200mA
⎯
150
nA VR = 240V
⎯
5
μA _{VR = 360V}
0.65
2.0
pF V_R = 0V, f = 1.0MHz
⎯
50
ns ^{IF = IR = 30mA,}
I_rr = 3.0mA, R_L = 100Ω
Notes:
4. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
500
400
300
200
100
0
0
30
60
90
120
150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve, Total Package
1,000
100
T_J = 150°C
10
T_J = 125°C
T_J = 85°C
1
T_J = 25°C
T_J = -55°C
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics, Per Element
MMBD5004S
Document number: DS30832 Rev. 8 - 2
2 of 4
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May 2011
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