MBRM5100-13-F Datasheet, PDF (3/3 Pages) Diodes Incorporated – 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

7.5
6.0
4.5
Note 2
3.0
1.5
Note 3
Note 1
3.5
3.0
2.5
2.0
1.5
Note 4
1.0
0.5
Note 5
0
0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 5 DC Forward Current Derating
0
01
23
4
5
6
7
I_F(AV), AVERAGE FORWARD CURRENT (A)
Fig. 6 Forward Power Dissipation
Notes:
1. TA = TSOLDERING POINT, RqJS = 2.7°C/W, RqSA = 0°C/W.
2. Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. R_qJA in range of 20-40°C/W.
3. Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. R_qJA in range of 100-140°C/W.
4. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 3.
5. Maximum power dissipation when the device is mounted in accordance to the conditions described in Note 2.
Ordering Information ^{(Note 6)}
Device
MBRM5100-13
Packaging
POWERMITEâ3
Notes: 6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Shipping
5000/Tape & Reel
MBRM5100
YYWW(K)
MBRM5100 = Product type marking code
= Manufacturers’ code marking
YYWW = Date code marking
YY = Last digit of year ex: 02 for 2002
WW = Week code 01 to 52
(K) = Factory Designator
NOT RECOMMENDED ^{FOR NEW DESIGNS}
USE PDS5100
POWERMITE is a registered trademark of Microsemi Corporation.
DS30141 Rev. 4 - 3
3 of 3
www.diodes.com
MBRM5100