MBRM5100-13-F Datasheet, PDF (1/3 Pages) Diodes Incorporated – 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

MBRM5100
Features
5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
POWERMITEâ3
NOT RECOMMENDED ^{FOR NEW DESIGNS}
USE PDS5100
· Guard Ring Die Construction for Transient Protection
· Low Power Loss, High Efficiency
· High Reverse Breakdown Voltage
· For Use in Low Voltage, High Frequency Inverters, Free
A
Wheeling, and Polarity Protection Applications
P
3
E
G
Mechanical Data
· Case: POWERMITEâ3
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
· Polarity: See Diagram
· Marking: See Page 3
· Ordering Information: See Page 3
· Weight: 0.072 grams (approximate)
JH
B
1
2
D
C
C
M
K
L
PIN 1
PIN 2
PIN 3, BOTTOMSIDE
HEAT SINK
Note:
Pins 1 & 2 must be electrically
connected at the printed circuit board.
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
POWERMITEâ3
Dim Min Max
A
4.03 4.09
B
6.40 6.61
C
.864 .914
D
1.83 NOM
E
1.10 1.14
G
.173 .203
H
5.01 5.17
J
4.37 4.43
K
.173 .203
L
.71
.77
M
.36
.46
P
1.73 1.83
All Dimensions in mm
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (See also figure 5)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
@TC = 80°C
Typical Thermal Resistance Junction to Case
Typical Thermal Resistance Junction to Soldering Point
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
V_RWM
V_R
V_R(RMS)
I_O
I_FSM
R_qJC
R_qJS
T_j
T_STG
Value
100
70
5
100
1.2
2.7
-65 to +125
-65 to +150
Unit
V
V
A
A
°C/W
°C/W
°C
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Reverse Breakdown Voltage (Note 1)
Forward Voltage
Peak Reverse Current (Note 1)
Symbol
V_(BR)R
V_F
I_R
Min Typ Max Unit
Test Condition
100
¾
¾
V IR = 0.2mA
¾
0.75 0.81
I_F = 5A, T_j = 25°C
¾
¾
0.58 0.64
0.84 0.90
V
IF = 5A, Tj = 125°C
IF = 10A, Tj = 25°C
¾
0.67 0.73
I_F = 10A, T_j = 125°C
¾
¾
0.015 0.2
2
100
mA
T_j = 25°C, V_R = 100V
Tj = 125°C, VR = 100V
Notes: 1. Short duration test pulse used to minimize self-heating effect.
DS30141 Rev. 4 - 3
1 of 3
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MBRM5100
ã Diodes Incorporated