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| FMMT625 Datasheet, PDF (3/6 Pages) Diodes Incorporated – 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 | |||
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A Product Line of
Diodes Incorporated
FMMT625
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 6)
Symbol
Min
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
ICES
150
150
5
-
-
-
200
hFE
300
30
-
Collector-Emitter Saturation Voltage (Note 6)
-
VCE(sat)
-
-
Base-Emitter Saturation Voltage (Note 6)
Base-Emitter Saturation Voltage (Note 6)
VBE(sat)
-
VBE(on)
-
Transition Frequency
fT
100
Collector Output Capacitance
Turn-On Time
Turn-Off Time
Cobo
-
t(on)
-
t(off)
-
Notes: 6. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ⤠2%
Typ
300
175
8.3
-
-
-
400
450
45
15
26
110
180
0.85
0.74
135
6
160
1500
Max
-
-
-
100
100
100
-
-
-
-
50
200
300
1.0
1.0
-
10
-
-
Unit
V
V
V
nA
nA
nA
-
mV
V
V
MHz
pF
ns
ns
Test Condition
IC = 100µA
IC = 10mA
IE = 100µA
VCB =130V
VEB = 4V
VCES =130V
IC = 10mA, VCE = 10V
IC = 200mA, VCE = 10V
IC = 1A, VCE = 10V
IC = 3A, VCE = 10V
IC =0.1A, IB = 10mA
IC =0.1A, IB = 1mA
IC =1A, IB = 50mA
IC =1A, IB = 50mA
IC =1A, VCE = 10V
IC = 50mA, VCE = 10V,
f=100MHz
VCB = 10V, f=1MHz
VCC = 50V, IC = 500mA,
IB1 = -IB2 = 50mA
FMMT625
Document number: DS33237 Rev. 4 - 2
3 of 6
www.diodes.com
October 2010
© Diodes Incorporated
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