FMMT625 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 150V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23

Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 4)
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
A Product Line of
Diodes Incorporated
FMMT625
Value
Unit
150
V
150
V
5
V
1
A
3
A
500
mA
Thermal Characteristics
Characteristic
Power Dissipation at T_A = 25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P_D
T_J, T_STG
Value
625
-55 to +150
Notes:
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
Unit
mW
°C
Thermal Characteristics and Derating information
10
1
100m
DC
1s
100ms
10ms
1ms
100µs
Single Pulse T =25°C
amb
10m
100m
1
10
100
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
200
150
D=0.5
100
50 ^D=0.2
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Transient Thermal Impedance
FMMT625
Document number: DS33237 Rev. 4 - 2
2 of 6
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October 2010
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