DVRN6056_10 Datasheet, PDF (3/5 Pages) Diodes Incorporated – VOLTAGE REFERENCE ARRAY

DVRN6056
NPN Transistor Section (Q1)
30
2.0
20
f = 1MHz
C_ibo
1.8
I_C = 1mA
I_C = 30mA
1.6
I_C = 10mA
I_C = 100mA
1.4
10
1.2
I_C = 300mA
1.0
0.8
5.0
C_obo
1.0
0.1
1.0
10
50
V_R, REVERSE VOLTAGE (V)
Fig. 3 Typical Capacitance Characteristics
0.6
0.4
0.2
0
0.001 0.01
0.1
1
10
100
I_B, BASE CURRENT (mA)
Fig. 4 Typical Collector Saturation Region
0.5
I_C
I_B
=
10
0.4
0.3
0.2
T_A = 25°C
T_A = 150°C
0.1
T_A = -50°C
0
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1,000
V_CE = 5V
1.0
0.9 ^VCE ^{= 5V}
0.8
T_A = -50°C
0.7
T_A = 25°C
0.6
0.5
T_A = 150°C
0.4
0.3
0.2
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
100
10
1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current
DVRN6056
Document number: DS30556 Rev. 5 - 2
3 of 5
www.diodes.com
March 2010
© Diodes Incorporated