DT452AP Datasheet, PDF (3/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

-20
V_GS = -10 V
-6.0
-5.0
-15
-4.5
-4.0
-10
-3.5
-5
-3.0
3.0
V_GS = -3.5 V
-4.0
2.5
-4.5
2.0
-5.0
1.5
-6.0
1.0
-10.0
0
0
-1
-2
-3
-4
V_DS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1, On-Region Characteristics
0.5
0
-4
-8
-12
-16
-20
I_D, DRAIN CURRENT (A)
Fig. 2, On-Resistance vs Gate Voltage & Drain Current
1.6
I_D = -5.0A
V_GS = -10 V
1.4
1.2
1.0
0.8
V_DS = -10 V
20
15
T_j = -55 C _{125 C}
25 C
10
5
0.6
-50 -25 0
25 50 75 100 125 150
Fig. 3T, ^{j,OJnU-RNeCsTisIOtaNncTeEvMsPJEunRcAtTioUnRTEem(} pCe)rature
0
-1
-2
-3
-4
-5
-6
V_GS,FGigA. T4E,
TO SOURCE VOLTAGE
Transfer Characteristics
(V)
DS11611 Rev. C-4
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DT452AP