DT452AP Datasheet, PDF (2/4 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
-30
—
Zero Gate Voltage Drain Current
T_j = 55°C
I_DSS
—
—
Gate-Body Leakage, Forward
I_GSSF
—
—
Gate-Body Leakage, Reverse
I_GSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V_GS(th)
-1.0
-1.6
T_j = 125°C
V_GS(th)
-0.7
-1.2
Static Drain-Source On-Resistance
R_{DS (ON)}
—
R_{DS (ON)}
—
Tj = 125°C ^RDS (ON)
—
0.052
0.075
0.085
On-State Drain Current
I_D(ON)
-15
-5.0
—
Forward Transconductance
gFS
—
7.0
DYNAMIC CHARACTERISTICS
Input Capacitance
C_ISS
—
690
Output Capacitance
C_OSS
—
430
Reverse Transfer Capacitance
C_RSS
—
160
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
9.0
Turn-On Rise Time
t_r
—
20
Turn-Off Delay Time
t_D(OFF)
—
40
Turn-Off Fall Time
tf
—
19
Total Gate Charge
Q_g
—
22
Gate-Source Charge
Q_gs
—
3.2
Gate-Drain Charge
Q_gd
—
5.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Drain-Source Diode Forward Voltage
V_SD
—
-0.85
Notes: 2. Pulse Test: Pulse width l 300 µs, duty cycle l 2.0%.
Max
—
-1.0
-10
100
-100
-2.8
-2.2
0.065
0.13
0.10
—
—
—
—
—
20
30
50
40
30
—
—
-2.5
-1.2
Unit
V
µA
nA
nA
Test Condition
VGS = 0V, ID = -250µA
VDS = -24V, V_GS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -5.0A
W
V_GS = -10V, I_D = -5.0A
V_GS = -4.5V, I_D = -4.3A
A
VGS = -10V, VDS = -5 .0V
V_GS = -4.5V, V_DS = -5 .0V
m
VDS = -10V, ID = -5.0A
pF
pF
V_DS = -15V, V_GS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = -10V, I_D = -1.0A
ns
V_GEN = -10V, R_GEN = 6.0W
ns
nC
nC
V_DS = -10V. I_D = -5.0A.
V_GS = -10V
nC
A
V
VGS = 0V, IS = -2.5A (Note 2)
DS11611 Rev. C-4
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DT452AP