DT451N Datasheet, PDF (3/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

18
V_GS = 10V _6.0
5.0
4.5
4.0
12
3.5
6
3.0
3.0
V_GS = 3.5V
4.0V
2.5
2.0
4.5V
1.5
5.0V
6.0V
1.0
10V
0
0
1
2
V_DFSig,.D1R, AOINn--RSOegUioRnCCEhVaOraLcTteArGisEtic(sV)
0.5
3
0
3
6
9
12 15
18
Fig. 2, On-ResisI^Dta, nDcReAvIsNGCaUteRVRoEltNaTge(Aa)nd Drain Current
1.6
I_D = 5.5A
V_GS = 10V
1.4
1.2
1.0
10
V_DS = 10V
8
6
4
T_J = -55 C 125
25
0.8
2
0.6
-50 -25 0
25 50 75 100 125 150
FTig^j,.
JUNCTION TEMPERATURE ( C)
3, On-Resistance vs Temperature
0
1
1.5
2
2.5
3 3.5
4
V_GS,FGigA. T4E,
TO SOURCE VOLTAGE
Transfer Characteristics
(V)
DS11607 Rev. C-4
3 of 4
DT451N