DT451N Datasheet, PDF (2/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
30
—
Zero Gate Voltage Drain Current
T_j =55°C
I_DSS
—
—
Gate-Body Leakage, Forward
IGSSF
—
—
Gate-Body Leakage, Reverse
I_GSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
T_j = 125°C
V_GS(th)
1.0
0.7
1.6
1.2
Static Drain-Source On-Resistance
—
RDS (ON)
Tj = 125°C
0.042
0.065
0.064
On-State Drain Current
I_D(ON)
18
15
—
Forward Transconductance
g_FS
—
6.0
DYNAMIC CHACTERISTICS
Input Capacitance
C_ISS
—
730
Output Capacitance
COSS
—
370
Reverse Transfer Capacitance
CRSS
—
140
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
20
Turn-On Rise Time
t_r
—
15
Turn-Off Delay Time
t_D(OFF)
—
19
Turn-Off Fall Time
t_f
—
10
Total Gate Charge
Q_g
—
16
Gate-Source Charge
Q_gs
—
1.8
Gate-Drain Charge
Qgd
—
4.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Drain-Source Diode Forward Voltage
V_SD
—
0.8
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
2.0
20
100
-100
3.0
2.2
0.05
0.10
0.08
—
—
—
—
—
30
25
40
30
25
3
7.0
2.5
1.2
Unit
V
µA
nA
nA
Test Condition
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 5.5A
W
V_GS = 4.5V, I_D = 4.3A
A
VGS = 10V, VDS = 5.0V
V_GS = 4.5V, V_DS = 5.0V
m
VDS = 10V, ID = 5.5A
pF
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = 15V, I_D = 1.0A
ns
V_GEN = 10V, R_GEN = 6.0W
ns
nC
nC
V_DS = 10V. I_D = 5.5A.
V_GS = 10V
nC
A
V
VGS = 0V, IS = 5.5A (Note 2)
DS11607 Rev. C-4
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DT451N