DT410EL Datasheet, PDF (3/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

10
V_GS = 10V
4.0
6.0
3.5
5.0
8
6
3.0
4
2
2.5
2.0
V_GS = 3.0V
1.5
3.5
4.0
5.0
6.0
10
1.0
0
0
1
2
3
4
5
V_DFSig,.D1R, AOINn--RSOegUioRnCCEhVaOraLcTteArGisEtic(sV)
0.5
6
0
2
4
6
8
10
Fig. 2,
On-ResiIs^Dt,aDncReAvINs
CURRENT (A)
Gate Voltage and
Drain
Current
2.5
I_D = 2.1A
V_GS = 5V
2.0
1.5
1.0
10
V_DS = 10V
8
6
4
2
T_J = -55 C
125
25
0.5
-50
0
50
100
150 175
FTig^j,.
JUNCTION TEMPERATURE ( C)
3, On-Resistance vs Temperature
0
1
2
3
4
5
V_GS,FGigA. T4E,
TO SOURCE VOLTAGE
Transfer Characteristics
(V)
DS11601 Rev.C-4
3 of 4
DT410EL