DT410EL Datasheet, PDF (2/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
DRAIN-SOURCE AVALANCHE RATINGS (Note 2)
Single Pulse Drain-Source Avalanche
Energy
W_DSS
—
—
Maximum Drain-Source Avalanche
Current
I_AR
—
—
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
100
—
Zero Gate Voltage Drain Current
T_j =55°C
I_DSS
—
—
—
—
Gate-Body Leakage, Forward
I_GSSF
—
—
Gate-Body Leakage, Reverse
I_GSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
T_j = 125°C
V_GS(th)
1.0
0.65
1.5
1.1
Static Drain-Source On-Resistance
T_j = 125°C
R_{DS (ON)}
—
0.2
0.37
On-State Drain Current
I_D(ON)
10
—
Forward Transconductance
g_FS
—
6.0
DYNAMIC CHARACTERISTICS
Input Capacitance
C_ISS
—
528
Output Capacitance
C_OSS
—
85
Reverse Transfer Capacitance
C_RSS
—
20
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
9.0
Turn-On Rise Time
t_r
—
72
Turn-Off Delay Time
t_D(OFF)
—
49
Turn-Off Fall Time
t_f
—
47
Total Gate Charge
Q_g
—
10
Gate-Source Charge
Q_gs
—
1.5
Gate-Drain Charge
Q_gd
—
5.6
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Drain-Source Diode Forward Voltage
V_SD
—
—
Reverse Recovery Time
t_rr
—
—
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
15
10
—
1.0
10
100
-100
2.0
1.5
0.25
0.50
—
—
—
—
—
20
120
80
80
16
—
—
2.3
1.3
150
Unit
Test Condition
mJ
VDD = 50V, ID = 10A
A
V
VGS = 0V, ID = 250µA
µA
VDS = 80V, VGS = 0V
nA
VGS = 20V, VDS = 0V
nA
VGS = -20V, VDS = 0V
V
VDS = VGS, ID = 250µA
W
VGS = 5.0V, ID = 2.1A
A
VGS = 5.0V, VDS = 5.0V
m
VGS = 10V, ID = 2.1A
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
pF
ns
ns
V_DD = 50V, I_D = 2.1A
ns
V_GEN = 5.0V, R_GEN = 25W
ns
nC
nC
V_DS = 80V, I_D = 2.1A.
V_GS = 5.0V
nC
A
V
VGS = 0V, IS = 2.3A (Note 2)
ns
VGS = 0V, IF = 2.3A,
dl_F / dt = 100A / µs
DS11601 Rev.C-4
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DT410EL