DT014 Datasheet, PDF (3/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

8
V_GS = 10V _8.0
6
7.0
6.5
4
6.0
2.5
V_GS = 5.5V
6.0
6.5
7.0
2.0
8.0
1.5
2
0
0
5.5
5.0
4.5
1
2
3
4
V_DFSig,.D1R, AOINn--RSOegUioRnCCEhVaOraLcTteArGisEtic(sV)
10
1.0
0.5
0
2
4
6
8
10
Fig. 2,
On-ResIi^Ds,taDnRceAIvNs
CURRENT (A)
Gate Voltage &
Drain
Current
2.0
I_D = 1.6A
1.8
V_GS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
FTig^j,.
JUNCTION TEMPERATURE ( C)
3, On-Resistance vs Temperature
10
V_DS = 10V
8
6
4
T_J = -55 C
125
25
2
0
2
4
6
8
10
V_GS,FGigA. T4E,
TO SOURCE VOLTAGE
Transfer Characteristics
(V)
DS11602 Rev.C-4
3 of 4
DT014