DT014 Datasheet, PDF (2/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Electrical Characteristics^{25°C unless otherwise specified}
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
60
—
Zero Gate Voltage Drain Current
T_j =125°C
I_DSS
—
—
—
—
Gate-Body Leakage, Forward
IGSSF
—
—
Gate-Body Leakage, Reverse
I_GSSR
—
—
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V_GS(th)
2.0
3.0
Static Drain-Source On-Resistance
R_{DS (ON)}
—
0.18
Forward Transconductance
g_FS
—
2.0
DYNAMIC CHARACTERISTICS
Input Capacitance
C_ISS
—
155
Output Capacitance
C_OSS
—
60
Reverse Transfer Capacitance
CRSS
—
15
SWITCHING CHARACTERISTICS (Note 2)
Turn-On Delay Time
t_D(ON)
—
10
Turn-On Rise Time
t_r
—
64
Turn-Off Delay Time
t_D(OFF)
—
10
Turn-Off Fall Time
t_f
—
10
Total Gate Charge
Q_g
—
5.0
Gate-Source Charge
Qgs
—
1.2
Gate-Drain Charge
Q_gd
—
2.0
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max Continuous Drain-Source Diode
Forward Current
I_S
—
—
Max Pulsed Drain-Source Diode
Forward Current
I_SM
—
—
Drain-Source Diode Forward Voltage
(Note 2)
V_SD
—
0.95
Reverse Recovery Time
t_rr
—
—
Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.
Max
—
25
250
100
-100
4.0
0.2
—
—
—
—
20
100
20
20
11
3.1
5.8
2.7
22
1.6
140
Unit
V
µA
nA
nA
V
W
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Test Condition
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
V_DS = 48V, V_GS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.6A
VDS = 25V, ID = 1.6A
VDS = 25V, VGS = 0V
f = 1.0MHz
V_DD = 30V, I_D = 10A
V_GEN = 10V, R_GEN = 24W
VDS = 48V. ID = 10A.
V_GS = 10V
A
A
V
VGS = 0V, IS = 2.7A
ns
VGS = 0V, IF = 10A
dl_F / dt = 100A/µs
DS11602 Rev.C-4
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DT014