DSS5240T Datasheet, PDF (3/4 Pages) Diodes Incorporated – LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

10,000
1,000
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
100
V_CE = -2V
1
I_C/I_B = 10
0.1
0.01
DSS5240T
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
10
1
10
100
1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
1.0
V_CE = -2V
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4
T_A = 85°C
0.2 ^TA ^{= 150°C}
0
1
10
100
1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
100
C_ibo
0.001
1
10
100
1,000
10,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
I_C/I_B = 10
0.8
T_A = -55°C
0.6
T_A = 25°C
T_A = 85°C
0.4
T_A = 150°C
0.2
1
10
100
1,000 10,000
-I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1,000
100
10
10
C_obo
1
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 7 Typical Capacitance Characteristics
V_CE = -10V
f = 100MHz
1
0 10 20 30 40 50 60 70 80 90 100
-I_C, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
DSS5240T
Document number: DS31591 Rev. 2 - 2
3 of 4
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November 2008
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