DSS5240T Datasheet, PDF (2/4 Pages) Diodes Incorporated – LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

DSS5240T
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 4)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol Min
Typ
V_(BR)CBO
-40
⎯
V_(BR)CEO
-40
⎯
V_(BR)EBO
-5
⎯
⎯
⎯
I_CBO
⎯
⎯
I_EBO
⎯
⎯
300
⎯
260
⎯
h_FE
210
⎯
100
⎯
⎯
⎯
⎯
45
V_CE(SAT)
⎯
⎯
⎯
⎯
⎯
⎯
R_CE(SAT)
⎯
90
V_BE(SAT)
⎯
⎯
V_BE(ON)
⎯
⎯
Transition Frequency
f_T
100
⎯
Output Capacitance
C_ob
⎯
⎯
Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
⎯
⎯
⎯
-100
-50
-100
⎯
⎯
⎯
⎯
-100
-110
-225
-225
-350
220
-1.1
-0.75
⎯
28
Unit
Test Conditions
V I_C = -100μA
V I_C = -10mA
V I_E = -100μA
nA V_CB = -30V, I_E = 0
μA V_CB = -30V, I_E = 0, T_A = 150°C
nA V_EB = -4V, I_C = 0
V_CE = -2V, I_C = -0.1A
⎯ ^{VCE = -2V, IC = -0.5A}
V_CE = -2V, I_C = -1A
V_CE = -2V, I_C = -2A
I_C = -100mA, I_B = -1mA
I_C = -500mA, I_B = -50mA
mV I_C = -750mA, I_B = -15mA
I_C = -1A, I_B = -50mA
I_C = -2A, I_B = -200mA
mΩ I_C = -500mA, I_B = -50mA
V I_C = -2A, I_B = -200mA
V V_CE = -2V, I_C = -100mA
MHz
V_CE = -10V, I_C = -100mA,
f = 100MHz
pF V_CB = -10V, f = 1MHz
800
700
600
500
400
300
200
100
R_θJA = 209°C/W
0
0
25
50
75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
2.0
1.8
1.6
I_B = -5mA
1.4
I_B = -4mA
1.2
I_B = -3mA
1.0
0.8
I_B = -2mA
0.6
0.4
I_B = -1mA
0.2
0
0 1 2 3 4 5 6 7 8 9 10
-V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS5240T
Document number: DS31591 Rev. 2 - 2
2 of 4
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November 2008
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