DSS4320T_15 Datasheet, PDF (3/5 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

1.8
1.6
1.4
I_B = 5mA
1.2
I_B = 4mA
1.0
I_B = 3mA
0.8
0.6
I_B = 2mA
0.4
I_B = 1mA
0.2
0
0
1
2
3
4
5
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
1
I_C/I_B = 10
0.1
0.01
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.001
1
10
100
1,000
10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
I_C/I_B = 10
1.0
1,000
T_A = 150°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
100
DSS4320T
V_CE = 2V
10
1
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
1.2
V_CE = 2V
1.0
0.8
T_A = -55°C
0.6
T_A = 25°C
0.4 T_A = 85°C
0.2 ^{TA = 150°C}
0
1
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1,000
f = 1MHz
0.8
T_A = -55°C
0.6 _{TA = 25°C}
T_A = 85°C
0.4
T_A = 150°C
0.2
100
10
C_ibo
C_obo
0
1
10
100
1,000 10,000
I_C, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
DSS4320T
Document number: DS31621 Rev. 2 - 2
3 of 5
www.diodes.com
November 2008
© Diodes Incorporated