DSS4320T_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

DSS4320T
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 5)
Emitter-Base Breakdown Voltage
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol Min
Typ
⎯
⎯
I_CBO
⎯
⎯
I_EBO
⎯
⎯
V_(BR)CBO
20
⎯
V_(BR)CEO
20
⎯
V_(BR)EBO
5
⎯
220
⎯
220
⎯
h_FE
220
⎯
200
⎯
150
⎯
⎯
⎯
⎯
⎯
V_CE(SAT)
⎯
⎯
⎯
70
⎯
⎯
R_CE(SAT)
⎯
35
⎯
⎯
V_BE(SAT)
⎯
⎯
V_BE(ON)
⎯
⎯
Transition Frequency
f_T
100
⎯
Output Capacitance
C_ob
⎯
⎯
Notes: 5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Max
100
50
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
70
120
230
210
310
105
1.1
1.2
1.2
⎯
35
Unit
Test Conditions
nA V_CB = 20V, I_E = 0
μA V_CB = 20V, I_E = 0, T_A = 150°C
nA V_EB = 5V, I_C = 0
V I_C = 100μA
V I_C = 10mA
V I_E = 100μA
V_CE = 2V, I_C = 0.1A
V_CE = 2V, I_C = 0.5A
⎯ V_CE = 2V, I_C = 1A
V_CE = 2V, I_C = 2A
V_CE = 2V, I_C = 3A
I_C = 0.5A, I_B = 50mA
I_C = 1A, I_B = 50mA
mV I_C = 2A, I_B = 40mA
I_C = 2A, I_B = 200mA
I_C = 3A, I_B = 300mA
mΩ I_E = 2A, I_B = 200mA
V I_C = 2A, I_B = 40mA
V I_C = 3A, I_B = 300mA
V V_CE = 2V, I_C = 1A
MHz
V_CE = 5V, I_C = 100mA,
f = 100MHz
pF V_CB = 10V, f = 1MHz
800
700
600
500
400
300
200
100
R_θJA = 209°C/W
0
0
25
50
75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
10
Pw = 10ms
1
Pw = 100ms
0.1
DC
0.01
0.001
0.1
1
10
100
V_CE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DSS4320T
Document number: DS31621 Rev. 2 - 2
2 of 5
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November 2008
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