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DSS4240T_15 Datasheet, PDF (3/5 Pages) Diodes Incorporated – 40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR
800
700
600
500
400
300
200
100
RθJA = 209°C/W
0
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 4)
1,000 TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
100
DSS4240T
2.0
1.8
IB = 5mA
1.6
IB = 4mA
1.4
IB = 3mA
1.2
1.0
IB = 2mA
0.8
0.6
0.4
IB = 1mA
0.2
0
0
2
4
6
8
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1
IC/IB = 10
0.1
0.01
TA = 150°C
TA = 85°C
TA = 25°C
TA = -55°C
VCE = 2V
10
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = 2V
1.0
0.001
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
IC/IB = 10
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
0.2 TA = 150°C
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0
0.001 0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
DSS4240T
Document number: DS31623 Rev. 4 - 2
3 of 5
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November 2011
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