DSS4240T_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 40V LOW VCE(sat) NPN SURFACE MOUNT TRANSISTOR

Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Collector Current
Continuous Collector Current
Peak Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_CM
I_C
I_BM
Value
40
40
5
3
2
0.3
DSS4240T
Unit
V
V
V
A
A
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient Air (Note 4)
Thermal Resistance, Junction to Lead (Note 5)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
R_θJC
T_J, T_STG
Value
600
209
74.95
-55 to +150
Unit
mW
°C/W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 6)
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 6)
DC Current Gain
Collector-Emitter Saturation Voltage
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
Symbol Min
Typ
BV_CBO
40
⎯
BV_CEO
40
⎯
BV_EBO
5
⎯
⎯
⎯
I_CBO
⎯
⎯
I_EBO
⎯
⎯
350
⎯
300
⎯
h_FE
300
⎯
150
⎯
⎯
⎯
⎯
30
V_CE(sat)
⎯
⎯
⎯
⎯
⎯
⎯
R_CE(sat)
⎯
60
V_BE(sat)
⎯
⎯
V_BE(on)
⎯
⎯
Transition Frequency
f_T
100
⎯
Output Capacitance
C_ob
⎯
⎯
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
Max
⎯
⎯
⎯
100
50
100
⎯
⎯
⎯
⎯
70
100
180
180
320
200
1.1
0.75
⎯
20
Unit
Test Conditions
V I_C = 100μA
V I_C = 10mA
V I_E = 100μA
nA V_CB = 30V, I_E = 0
μA V_CB = 30V, I_E = 0, T_A = 150°C
nA V_EB = 4V, I_C = 0
V_CE = 2V, I_C = 0.1A
⎯ ^{VCE = 2V, IC = 0.5A}
V_CE = 2V, I_C = 1A
V_CE = 2V, I_C = 2A
I_C = 100mA, I_B = 1mA
I_C = 500mA, I_B = 50mA
mV I_C = 750mA, I_B = 15mA
I_C = 1A, I_B = 50mA
I_C = 2A, I_B = 200mA
mΩ I_C = 500mA, I_B = 50mA
V I_C = 2A, I_B = 200mA
V V_CE = 2V, I_C = 100mA
MHz ^{VCE = 10V, IC = 100mA,}
f = 100MHz
pF V_CB = 10V, f = 1MHz
DSS4240T
Document number: DS31623 Rev. 4 - 2
2 of 5
www.diodes.com
November 2011
© Diodes Incorporated