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DMG9926UDM Datasheet, PDF (3/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
◁
0.06
0.05
0.04
0.03
0.02
VGS = 1.8V
VGS = 2.5V
VGS = 4.5V
0.01
0
0
1.8
1.6
5
10
15
20
25 30
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.4
VGS = 2.5V
ID = 5A
1.2
VGS = 4.5V
ID = 8.2A
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
1.0
0.05
0.04
VGS = 4.5V
0.03
0.02
0.01
DMG9926UDM
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
0
0
4
8
12
16
20
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.05
0.04
0.03
0.02
VGS = 2.5V
ID = 5A
VGS = 4.5V
ID = 8.2A
0.01
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
10
0.8
ID = 1mA
0.6
ID = 250µA
0.4
0.2
1
TA = 25°C
0.1
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMG9926UDM
Document number: DS31770 Rev. 4 - 2
3 of 6
www.diodes.com
June 2009
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