DMG9926UDM Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low Gate Charge
• Low R_DS(ON):
• 28mΩ @V_GS = 4.5V
• 32mΩ @V_GS = 2.5V
• 40mΩ @V_GS = 1.8V
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4)
S₁
DMG9926UDM
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOT-26
• Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.008 grams (approximate)
SOT-26
D1
D2
G₁
D₁/D₂
D₁/D₂
G1
TOP VIEW
S₂
G₂
TOP VIEW
Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
G2
S1
S2
Equivalent Circuit
Value
Unit
20
V
±8
V
4.2
3.2
A
30
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t ≤10s
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
0.98
128
-55 to +150
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C /W
°C
DMG9926UDM
Document number: DS31770 Rev. 4 - 2
1 of 6
www.diodes.com
June 2009
© Diodes Incorporated