DMG1012T Datasheet, PDF (3/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMG1012T
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1.7
1.5
V_GS = 1.8V
V_GS = 2.5V
V_GS = 4.5V
0.3
0.6
0.9
1.2
1.5
I_D, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.3
V_GS = 2.5V
I_D = 500mA
1.1
V_GS = 4.5V
I_D = 1.0A
0.9
0.7
0.5
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
1.6
0.6
0.5
V_GS = 4.5V
0.4
0.3
0.2
T_A = 150°C
T_A = 125°C
T_A = 85°C
T_A = 25°C
T_A = -55°C
0.1
0
0
0.3
0.6
0.9
1.2
1.5
I_D, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.8
0.6
V_GS = 2.5V
0.4
I_D = 500mA
V_GS = 4.5V
0.2
I_D = 1.0A
0
-50 -25 0 25 50 75 100 125 150
T_J, JUNCTION TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
10
1.2
0.8
I_D = 250µA
0.4
8
6
T_A = 25°C
4
2
0
-50 -25 0 25 50 75 100 125 150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMG1012T
Document number: DS31783 Rev. 3 - 2
3 of 6
www.diodes.com
October 2009
© Diodes Incorporated