DMG1012T Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected up to 2kV
• "Green" Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
ESD PROTECTED TO 2kV
TOP VIEW
DMG1012T
N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.002 grams (approximate)
SOT-523
Drain
D
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
G
S
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 1)
Steady
State
Pulsed Drain Current
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±6
0.63
0.45
6
Units
V
V
A
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
0.28
452
-55 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
W
°C/W
°C
DMG1012T
Document number: DS31783 Rev. 3 - 2
1 of 6
www.diodes.com
October 2009
© Diodes Incorporated