BC857BFA_15 Datasheet, PDF (3/6 Pages) Diodes Incorporated – 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806

BC857BFA
Electrical Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Collector-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
ON CHARACTERISTICS (Note 8)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Symbol
Min
BV_CBO
BV_CES
BV_CEO
BV_EBO
I_CBO
I_CES
h_FE
V_CE(sat)
V_BE(sat)
V_BE(on)
-50
-50
-45
-6.0


100
200


-600

C_obo

Typ
-100
-90
-65
-8.5


340
330
-70
-300
-760
-885
-670
-715
2.0
Current Gain-Bandwidth Product
f_T
100
340
Note:
8. Measured under pulsed conditions. Pulse width  300µs. Duty cycle  2%.
Max




-15
-15

470
-175
-500
-1000
-1100
-780
-850


Unit
Test Condition
V
I_C = -50µA, I_B = 0
I_C = -50µA, I_B = 0
V
I_C = -1mA, I_B = 0
V
I_E = -50µA, I_C = 0
nA V_CB = -40V
nA V_CE = -40V

I_C = -10µA, V_CE = -5.0V
I_C = -2.0mA, V_CE = -5.0V
mV
I_C = -10mA, I_B = -0.5mA
I_C = -100mA, I_B = -5.0mA
mV
I_C = -10mA, I_B = -0.5mA
I_C = -100mA, I_B = -5.0mA
mV
I_C = -2.0mA, V_CE = -5V
I_C = -10mA, V_CE = -5V
pF
MHz
V_CB = -10.0V, f = 1.0MHz, I_E = 0
V_CE = -5V, I_C = -10mA,
f = 100MHz
BC857FA
Document number: DS36018 Rev. 1 - 2
3 of 6
www.diodes.com
July 2013
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