BC857BFA_15 Datasheet, PDF (2/6 Pages) Diodes Incorporated – 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806

Absolute Maximum Ratings (@T_A = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
Thermal Characteristics (@T_A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Lead (Note 6)
Operating and Storage and Temperature Range
Symbol
P_D
R_θJA
R_JL
T_J, T_STG
Value
-50
-45
-6.0
-100
-200
Value
435
287
150
-55 to +150
BC857BFA
Unit
V
V
V
mA
mA
Unit
mW
°C/W
C/W
°C
ESD Ratings (Note 7)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
JEDEC Class
V
3A
V
B
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured
under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
V_CE(sat)
Limited
100m
DC 1s
100ms
10ms
10m
Single Pulse
T_amb=25°C
1ms
100µs
100m
1
10
- V_CE Collector-Emitter Voltage (V)
Safe Operating Area
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
300
275
T =25°C
amb
250
225
200
175 D=0.5
150
125
100
75
D=0.2
Single Pulse
50
D=0.05
25
D=0.1
0
100µ 1m 10m 100m 1
10 100 1k
Pulse Width (s)
Transient Thermal Impedance
100
Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
BC857FA
Document number: DS36018 Rev. 1 - 2
2 of 6
www.diodes.com
July 2013
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