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| APT13003S_15 Datasheet, PDF (3/5 Pages) Diodes Incorporated – 450V NPN HIGH VOLTAGE POWER TRANSISTOR | |||
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
DC Current Transfer Static Ratio (Note 7)
Symbol
Min
Typ
BVCES
700
â
BVCEO
450
â
BVEBO
9
â
ICEV
â
â
13
â
hFE
5
â
â
â
Collector-Emitter Saturation Voltage (Note 7)
VCE(sat)
â
â
â
â
Base-Emitter Saturation Voltage (Note 7)
VBE(sat)
â
â
Transition Frequency
Turn-on Time with Resistive Load
Storage Time with Resistive Load
Fall Time with Resistive Load
fT
4
â
ton
â
â
ts
â
â
tf
â
â
Note:
7. Measured under pulsed conditions. Pulse width ⤠300µs. Duty cycle ⤠2%.
A Product Line of
Diodes Incorporated
APT13003S
Max
â
â
â
10
30
25
0.3
0.6
1.0
1.2
â
1
3
0.5
Unit
V
V
V
µA
â
V
V
MHz
µs
Test Condition
IC = 100µA, VBE = 0V
IC = 100µA
IE = 100µA
VCE = 700V, VBE = -1.5V
IC = 0.5A, VCE = 2V
IC = 1.0A, VCE = 2V
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 0.5A, IB = 0.1A
IC = 1A, IB = 0.25A
IC = 0.1A, VCE = 10V
IC = 1A, VCC = 125V, IB1 = 0.2A,
IB2 = -0.2A, tp = 25µs
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
I =400mA
B
ï
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I =350mA
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B
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I =300mA
B
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I =250mA
B
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I =200mA
B
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I =150mA
ï
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B
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I =100mA
B
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ïï ï
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ïï
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ïï ï
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I =50mA
B
ï
ïï
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ïï
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ï
0.2
0.0
ïï
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0
1
2
3
4
5
6
7
Collector-Emitter Voltage V (V)
CE
40
35
30
25
20
15
10
5
0
0.01
Static Characteristics
10
T =125oC
J
1
T =25oC
J
0.1
0.01
0.1
h =5
FE
1
10
Collector Current I (A)
C
Collector-Emitter Saturation Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.1
APT13003S
Datasheet Number: DS36307 Rev. 2 - 2
3 of 5
www.diodes.com
T =125oC
J
T =25oC
J
V =2V
CE
0.1
1
10
Collector Current I (A)
C
DC Current Gain
T =25oC
J
T =125oC
J
h =5
FE
1
10
Collector Current I (A)
C
Base-Emitter Saturation Voltage
September 2014
© Diodes Incorporated
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