English
Language : 

APT13003S_15 Datasheet, PDF (2/5 Pages) Diodes Incorporated – 450V NPN HIGH VOLTAGE POWER TRANSISTOR
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Emitter Voltage (VBE = 0V)
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current (Note 5)
Continuous Base Current
Peak Pulse Base Current (Note 5)
Note:
5. Pulse test for Pulse Width < 5ms, Duty Cycle ≤ 10%.
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
A Product Line of
Diodes Incorporated
APT13003S
Value
Unit
700
V
450
V
9
V
1.3
A
2.6
A
0.65
A
1.3
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient Air
For TO92
For TO126 @ TC = +25°C
For TO92
For TO126
Thermal Resistance, Junction to Case
For TO92
For TO126
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
1.1
20
113.6
96
83.3
6.25
-65 to +150
Unit
W
°C/W
°C/W
°C
ESD Ratings (Note 6)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Note:
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit JEDEC Class
V
3B
V
C
Safe Operating Area and Derating Information (@TA = +25°C, unless otherwise specified.)
10
10
1
0.1
DC
0.01
1E-3
1
10
100
1000
Collector-Emitter Clamp Voltage V (V)
CE
Safe Operating Areas (TO92 Package)
1
DC
0.1
0.01
1E-3
1
10
100
1000
Collector-Emitter Clamp Voltage V (V)
CE
Safe Operating Areas (TO126 Package)
APT13003S
Datasheet Number: DS36307 Rev. 2 - 2
2 of 5
www.diodes.com
September 2014
© Diodes Incorporated