ZXTN26020DMF Datasheet, PDF (2/6 Pages) Diodes Incorporated – HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR

Maximum Ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current (Note 4)
Peak Pulse Current
Base Current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 3) @ T_A = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
P_D
R_θJA
R_θJA
T_J, T_STG
Notes:
3. Device mounted on FR-4 PCB with 1inch square pads.
4. Device mounted on FR-4 PCB with minimum recommended pad layout
1.2
1,000
1.0
Note 3
100
0.8
A Product Line of
Diodes Incorporated
ZXTN26020DMF
Value
Unit
20
V
20
V
7
V
1.5
A
4
A
0.5
A
Value
1
380
125
330
-55 to +150
Unit
W
mW
°C/W
°C/W
°C
Single Pulse
R_θJA(t) = r(t) * R_θJA
R_θJA = 328°C/W
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁/t₂
0.6
10
0.4
Note 4
1
0.2
0
0 20 40 60 80 100 120 140 160
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
1
D = 0.7
D = 0.5
D = 0.3
0.1
0.00001
0.001
0.1
10
1,000
t₁, PULSE DURATION TIME (s)
Fig. 2 Single Pulse Maximum Power Dissipation
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
D = 0.9
R_θJA(t) = r(t) * R_θJA
R_θJA = 328°C/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁/t₂
0.01
0.1
1
10
100
t₁, PULSE DURATION TIME (s)
Fig. 3 Transient Thermal Response
1,000
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
2 of 6
www.diodes.com
September 2009
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