ZXTN26020DMF Datasheet, PDF (1/6 Pages) Diodes Incorporated – HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR

A Product Line of
Diodes Incorporated
ZXTN26020DMF
HIGH GAIN, LOW V_CE(SAT) NPN BIPOLAR TRANSISTOR
Features
• High Gain Low Vcesat NPN transistor
• Very Low Rcesat
• High ICM capability
• 1.5A Continuous Current Rating
• Ultra-Small Surface mount Package
• Qualified to AEC-Q101 Standards for High Reliability
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• ESD rating: 400V-MM, 8KV-HBM
Mechanical Data
• Case: DFN1411-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper lead frame. Solderable
per MIL-STD-202, Method 208
• Weight: 0.003 grams (approximate)
Applications
• MOSFET and IGBT gate driving
• DC-DC conversion
• Interface between low voltage IC and Load
• LED driving
Top view
Bottom view
Device Symbol
Pin-out Top view
Ordering Information
Product
ZXTN26020DMFTA
Status
Active
Marking
Z1
Reel size (inches)
7
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
Tape width (mm)
8
Quantity per reel
3000
Marking Information
Z1
Z1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
Feb
1
2
2010
X
Mar
3
2011
Y
Apr
May
4
5
2012
Z
Jun
Jul
6
7
2013
A
Aug
Sep
8
9
2014
B
Oct
O
2015
C
Nov
Dec
N
D
ZXTN26020DMF
Documnt Number: DS31953 Rev. 2 - 1
1 of 6
www.diodes.com
September 2009
© Diodes Incorporated