MMBF170_08 Datasheet, PDF (2/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

400
350
300
250
200
150
100
50
R_θJA = 417°C/W
0
0 25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 1)
1
I_C
I_B ^{= 10}
MMBT4124
1,000
100
10
1
0.1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
10
I_C
I_B ^{= 10}
0.1
1
0.01
0.1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
15
f = 1MHz
10
0.1
0.1
1
10
100
1,000
I_C, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current
5
C_ibo
C_obo
0
0.1
1
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 5 Typical Capacitance Characteristics
MMBT4124
Document number: DS30105 Rev. 11 - 2
2 of 3
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January 2009
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