MMBF170_08 Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (MMBT4126)
• Ideal for Medium Power Amplification and Switching
• Lead, Halogen and Antimony Free, RoHS Compliant
• "Green" Device (Notes 2 and 4)
MMBT4124
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
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Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
C
B
E
Top View
Maximum Ratings @T_A = 25°C unless otherwise specified
Device Schematic
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous (Note 1)
Symbol
V_CBO
V_CEO
V_EBO
I_C
Value
30
25
5.0
200
Unit
V
V
V
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Small Signal Current Gain
Current Gain-Bandwidth Product
Symbol Min
V_(BR)CBO
30
V_(BR)CEO
25
V_(BR)EBO 5.0
I_CBO
⎯
I_EBO
⎯
h_FE
V_CE(SAT)
V_BE(SAT)
120
60
⎯
⎯
C_obo
⎯
C_ibo
⎯
h_fe
120
f_T
300
Max
⎯
⎯
⎯
50
50
360
⎯
0.30
0.95
4.0
8.0
480
⎯
Unit
Test Condition
V I_C = 10μA, I_E = 0
V I_C = 1.0mA, I_B = 0
V I_E = 10μA, I_C = 0
nA V_CB = 20V, I_E = 0V
nA V_EB = 3.0V, I_C = 0V
⎯
I_C = 2.0mA, V_CE = 1.0V
I_C = 50mA, V_CE = 1.0V
V I_C = 50mA, I_B = 5.0mA
V I_C = 50mA, I_B = 5.0mA
pF
pF
⎯
MHz
V_CB = 5.0V, f = 1.0MHz, I_E = 0
V_EB = 0.5V, f = 1.0MHz, I_C = 0
V_CE = 1.0V, I_C = 2.0mA,
f = 1.0kHz
V_CE = 20V, I_C = 10mA,
f = 100MHz
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead. Halogen and Antimony Free.
3. Short duration pulse test used to minimize self-heating effect.
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
MMBT4124
Document number: DS30105 Rev. 11 - 2
1 of 3
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January 2009
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