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| FMMT634 Datasheet, PDF (2/3 Pages) Zetex Semiconductors – NPN SILICON POWER DARLINGTON TRANSISTOR | |||
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FMMT634
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO
Breakdown Voltage
120 170
V
IC=100µA
Collector-Emitter
V(BR)CEO
Breakdown Voltage
100 115
V
IC=10mA*
Emitter-Base
V(BR)EBO
Breakdown Voltage
12
16
V
IE=100µA
Collector Cut-Off
Current
ICBO
10
nA
VCB=80V
Emitter Cut-Off
IEBO
Current
10
nA
VEB=7V
Collector Emitter
ICES
Cut-Off Current
100 nA
VCES=80V
Collector-Emitter
VCE(sat)
Saturation Voltage
Base-Emitter
VBE(sat)
Saturation Voltage
0.67
0.72
0.75
0.82
0.68
0.85
0.75 V
0.80 V
0.85 V
0.93 V
âV
0.96
1.5 1.65 V
IC=100mA, IB=1mA *
IC=250mA, IB=1mA *
IC=500mA, IB=5mA *
IC=900mA, IB=5mA *
IC=900mA, IB=5mA *â
IC=1A, IB=5mA *
IC=1A, IB=5mA *
Base-Emitter
Turn-On Voltage
VBE(on)
1.33 1.5 V
IC=1A, VCE=5V*
Static Forward
hFE
Current Transfer
Ratio
Transition
fT
Frequency
50K
20K 60K
15K 40K
5K 14K
600
24K
140
MHz
IC=10mA, VCE=5V *
IC=100mA, VCE=5V *
IC=1A, VCE=5V *
IC=2A, VCE=5V *
IC=5A, VCE=5V *
IC=1A, VCE=2V *
IC=50mA, VCE=10V
f=100MHz
Output Capacitance Cobo
9
20
pF
VCB=10V, f=1MHz
Turn-On Time
Turn-Off Time
t(on)
t(off)
290
ns
IC=500mA
VCC=20V
2.4
µs
IB=±1mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%.
â Tj=150°C
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