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FMMT634 Datasheet, PDF (1/3 Pages) Zetex Semiconductors – NPN SILICON POWER DARLINGTON TRANSISTOR | |||
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âSuperSOTâ SOT23 NPN SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 â APRIL 97
FEATURES
* 625mW POWER DISSIPATION
* Highest current capability SOT23 Darlington
* Very high hFE - specified at 2A (5K minimum)
- typically 600 at 5A
COMPLEMENTARY TYPE â FMMT734
PARTMARKING DETAIL â 634
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation
Operating and Storage Temperature Range
VCBO
VCEO
VEBO
ICM
IC
Ptot
Tj:Tstg
FMMT634
E
C
B
SOT23
VALUE
120
100
12
5
900
625
-55 to +150
UNIT
V
V
V
A
mA
mW
°C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm.
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%.
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