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| FMMT617 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTORS | |||
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FMMT617
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
15 70
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
15 18
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
8.2
V
IE=100µA
Collector Cut-Off
ICBO
Current
100 nA
VCB=10V
Emitter Cut-Off Current IEBO
Collector Emitter
ICES
Cut-Off Current
100 nA
100 nA
VEB=4V
VCES=10V
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
8
14 mV IC=0.1A, IB=10mA*
70 100 mV IC=1A, IB=10mA*
150 200 mV IC=3A, IB=50mA*
0.9 1.0 V
IC=3A, IB=50mA*
Base-Emitter Turn-On VBE(on)
Voltage
0.84 1.0 V
IC=3A, VCE=2V*
Static Forward Current hFE
Transfer
Ratio
Transition
fT
Frequency
200 415
300 450
200 320
150 240
80
80 120
MHz
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=12A, VCE=2V*
IC=50mA, VCE=10V
f=50MHz
Output Capacitance Cobo
30 40 pF
Turn-On Time
t(on)
120
ns
Turn-Off Time
t(off)
160
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ⤠2%
VCB=10V, f=1MHz
VCC=10V, IC=3A
IB1=IB2=50mA
3 - 150
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