FMMT617 Datasheet, PDF (1/4 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTORS

SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
* I_C CONT 3A
* 12A Peak Pulse Current
* Excellent H_FE Characteristics Up To 12A (pulsed)
* Extremely Low Saturation Voltage E.g. 8mV Typ.
* Extremely Low Equivalent On Resistance; R_CE(sat)
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
E
C
B
DEVICE TYPE
FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
COMPLEMENT
FMMT717
FMMT718
FMMT720
FMMT723
–
PARTMARKING
617
618
619
624
625
R_CE(sat)
50mΩ at 3A
50mΩ at 2A
75mΩ at 2A
-
-
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FMMT FMMT FMMT FMMT FMMT
617 618 619 624 625 UNIT
Collector-Base Voltage
V_CBO
Collector-Emitter Voltage
V_CEO
Emitter-Base Voltage
V_EBO
Peak Pulse Current**
I_CM
Continuous Collector Current
I_C
Base Current
I_B
Power Dissipation at T_amb=25°C*
P_tot
Operating and Storage Temperature T_j:T_stg
Range
15
20
50 125 150
V
15
20
50 125 150
V
5
5
5
5
5
V
12
6
6
3
3
A
3
2.5
2
1
1
A
500
mA
625
mW
-55 to +150
°C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
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