FMMT558 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

FMMT558
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
IC/IB=10
IC/IB=20
IC/IB=50
0.01
0.1
1
I+ - Collector Current (Amps)
VCE(sat) v IC
10 20
-55°C
+25°C
1.6
+100°C
+175°C
1.4
1.2
IC/IB=10
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
I+ - Collector Current (Amps)
10 20
VCE(sat) v IC
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
+100°C
+25°C
-55°C
VCE=10V
300
200
100
0.01
0.1
1
I+ - Collector Current (Amps)
hFE v IC
10 20
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
-55°C
+25°C
+100°C
+175°C
IC/IB=10
0.01
0.1
1
I+ - Collector Current (Amps)
VBE(sat) v IC
10 20
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
-55°C
+25°C
+100°C
+175°C
0.01
0.1
VCE=10V
1
10 20
I+ - Collector Current (Amps)
VBE(on) v IC
1
0.1
0.01
0.001
1V
DC
1s
100ms
10ms
1ms
100µs
10V
100V
1000V
VCE - Collector Emitter Voltage (V)
Safe Operating Area
3 - 134