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| FMMT558 Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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SOT23 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 Â JANUARY 1996
FEATURES
* Excellent hFE characteristics at IC=100mA
* Low saturation voltages
COMPLEMENTARY TYPE Â FMMT458
PARTMARKING DETAIL Â 558
FMMT558
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-400
V
-400
V
-5
V
-500
mA
-150
mA
-200
mA
500
mW
-55 to +150
°C
UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -400
V
IC=-100µA
Collector-Emitter Breakdown
Voltage
VBR(CEO) -400
V
IC=-10mA*
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
V(BR)EBO -5
ICBO ; ICES
IEBO
VCE(sat)
VBE(sat)
V
-100 nA
-100 nA
-0.2 V
-0.5 V
-0.9 V
IE=-100µA
VCB=-320V; V+-=320V
VEB=-4V
IC=-20mA, IB=-2mA *
IC=-50mA, IB=-6mA *
IC=-50mA, IB=-5mA *
Base-Emitter Turn On Voltage
VBE(on)
-0.9 V
IC=-50mA, VCE=-10V *
Static Forward Current Transfer hFE
Ratio
100
100 300
15
IC=-1mA, VCE =-10V
IC=-50mA, VCE=-10V *
IC=-100mA, VCE =-10V*
Transition Frequency
fT
50
MHz
IC=-10mA, VCE =-20V
f=20MHz
Collector-Base Breakdown
Cobo
Voltage
5
pF
VCB =-20V, f=1MHz
Switching times
ton
95
ns
toff
1600 ns
S*pMiceeapsuarreadmuentedredraptualisseadvcaoilnadbilteiounpso. nPurelsqeuwesidt tfho=r3th00isµds.eDviuctey cycle â¤2%
IC=-50mA, VCE =-100V
IB1=5mA, IB2=-10mA
3 - 133
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