DDTC114GUA_2 Datasheet, PDF (2/3 Pages) Diodes Incorporated – NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Bleeder Resistor (R₂) Tolerance
Gain-Bandwidth Product*
DDTC114GUA
DDTC124GUA
DDTC144GUA
DDTC115GUA
DDTC114GUA
DDTC124GUA
DDTC144GUA
DDTC115GUA
* Transistor - For Reference Only
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
ΔR₂
f_T
Min
Typ Max Unit
Test Condition
50
⎯
⎯
V I_C = 50μA
50
⎯
⎯
V I_C = 1mA
I_E = 720μA, DDTC114GUA
5
⎯
⎯
V ^{IE = 330μA, DDTC124GUA}
I_E = 160μA, DDTC144GUA
I_E = 72μA, DDTC115GUA
⎯
⎯
0.5 μA V_CB = 50V
300
580
140
65
⎯
260
130
μA V_EB = 4V
30
58
⎯
⎯
0.3 V I_C = 10mA, I_B = 0.5mA
30
56
68
⎯
⎯ ⎯ I_C = 5mA, V_CE = 5V
82
-30
⎯ +30 %
⎯
⎯
250
⎯
MHz ^{VCE = 10V, IE = -5mA,}
f = 100MHz
Typical Characteristics – DDTC114GUA
250
1
I_C/I_B = 10
200
150
100
0.1
0.01
75°C
25°C
-25°C
50
0
-50
0
50
100
150
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
1,000
V_CE = 10
0.001
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Fig. 2 V_CE(SAT) vs. I_C
5
I_E = 0mA
4
3
100
2
1
10
1
10
I_C, COLLECTOR CURRENT (mA)
Fig. 3 DC Current Gain
DS30324 Rev. 7 - 2
0
100
0
2 of 3
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5
10
15
20
25
30
V_R, REVERSE BIAS VOLTAGE (V)
Fig. 4 Output Capacitance
DDTC (R2-ONLY SERIES) UA
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