DDTA113TE_2 Datasheet, PDF (2/4 Pages) Diodes Incorporated – PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Min Typ Max Unit
Test Condition
Collector-Base Breakdown Voltage
BV_CBO
-50
⎯ ⎯ V I_C = -50μA
Collector-Emitter Breakdown Voltage
BV_CEO
-50
⎯ ⎯ V I_C = -1mA
Emitter-Base Breakdown Voltage
BV_EBO
-5
⎯ ⎯ V I_E = -50μA
Collector Cutoff Current
I_CBO
⎯
⎯ -0.5 μA V_CB = -50V
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Gain-Bandwidth Product*
* Transistor - For Reference Only
I_EBO
V_CE(sat)
h_FE
f_T
⎯
⎯ -0.5 μA V_EB = -4V
I_C/I_B = -10mA/-1mA DDTA113TE
I_C/I_B = -5mA/-0.5mA DDTA123TE
I_C/I_B = -2.5mA/-.25mA DDTA143TE
⎯
⎯
-0.3
V ^{IC/IB = -1mA/-.1mA DDTA114TE}
I_C/I_B = -5mA/-0.5mA DDTA124TE
I_C/I_B = -2.5mA/-.25mA DDTA144TE
I_C/I_B = -1mA/-0.1mA DDTA115TE
I_C/I_B = -.5mA/-.05mA DDTA125TE
100 250 600 ⎯ I_C = -1mA, V_CE = -5V
⎯
250
⎯
MHz ^{VCE = -10V, IE = 5mA,}
f = 100MHz
DS30319 Rev. 6 - 2
2 of 4
www.diodes.com
DDTA (R1-ONLY SERIES) E
© Diodes Incorporated