CTA2P1N_1 Datasheet, PDF (2/7 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY

Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element
@ T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS (Note 3)
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Symbol Min
V(BR)CBO
V_(BR)CEO
V(BR)EBO
I_CEX
IBL
-40
-40
-5.0
¾
¾
hFE
VCE(SAT)
VBE(SAT)
30
60
100
100
20
¾
-0.75
¾
Ccb
¾
C_eb
¾
hie
1.5
h_re
0.1
hfe
60
h_oe
1.0
f_T
200
t_d
¾
tr
¾
t_s
¾
tf
¾
Max
¾
¾
¾
-100
-100
¾
¾
¾
300
¾
-0.40
-0.75
-0.95
-1.30
8.5
30
15
8.0
500
100
¾
15
20
225
30
Unit
Test Condition
V
I_C = -100mA, I_E = 0
V
IC = -1.0mA, IB = 0
V
I_E = -100mA, I_C = 0
nA
V_CE = -35V, V_EB(OFF) = -0.4V
nA
V_CE = -35V, V_EB(OFF) = -0.4V
I_C = -100µA, V_CE = -1.0V
IC = -1.0mA, VCE = -1.0V
I_C = -10mA, V_CE = -1.0V
¾
IC = -150mA, VCE = -2.0V
I_C = -500mA, V_CE = -2.0V
V
I_C = -150mA, I_B = -15mA
IC = -500mA, IB = -50mA
V
I_C = -150mA, I_B = -15mA
IC = -500mA, IB = -50mA
pF
pF
kW
x 10^-4
¾
mS
MHz
V_CB = -10V, f = 1.0MHz, I_E = 0
VEB = -0.5V, f = 1.0MHz, IC = 0
V_CE = -10V, I_C = -1.0mA,
f = 1.0kHz
V_CE = -10V, I_C = -20mA,
f = 100MHz
ns
V_CC = -30V, I_C = -150mA,
ns
VBE(off) = -2.0V, IB1 = -15mA
ns
V_CC = -30V, I_C = -150mA,
ns
I_B1 = I_B2 = -15mA
Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element
@ T_A = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Test Condition
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BVDSS
60
@ T_C = 25°C
@ TC = 125°C
IDSS
¾
I_GSS
¾
70
¾
V VGS = 0V, ID = 10mA
¾
1.0
500
µA VDS = 60V, VGS = 0V
¾
±10
nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
V_GS(th)
1.0
@ Tj = 25°C
@ T_j = 125°C
R_{DS (ON)}
¾
ID(ON)
0.5
g_FS
80
¾
2.0
V VDS = VGS, ID =-250mA
3.2 7.5
4.4 13.5
VGS = 5.0V, ID = 0.05A
W
V_GS = 10V, I_D = 0.5A
1.0
¾
A VGS = 10V, VDS = 7.5V
¾
¾
mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
¾
22
50
pF
C_oss
¾
11
25
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
Crss
¾
2.0 5.0
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
t_D(ON)
¾
tD(OFF)
¾
7.0
20
11
20
ns VDD = 30V, ID = 0.2A,
R_L = 150W, V_GEN = 10V,
ns _{RGEN = 25W}
Note: 2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found
on our website at http://www.diodes.com/datasheets/ap02001.pdf.
3. Short test pulse used to minimize self-heating effect.
DS30296 Rev. 7 - 2
2 of 7
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CTA2P1N