CTA2P1N_1 Datasheet, PDF (1/7 Pages) Diodes Incorporated – COMPLEX TRANSISTOR ARRAY

SPICE MODEL: CTA2P1N
CTA2P1N
COMPLEX TRANSISTOR ARRAY
Features
· Combines MMBT4403 type transistor with 2N7002 type MOSFET
· Small Surface Mount Package
· NPN/P-Channel Complement Available: CTA2N1P
· Lead Free/RoHS Compliant (Note 1)
A
Mechanical Data
A80 ^{B C}
· Case: SOT-363
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
G
H
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Solderable per MIL-STD-202, Method 208
K
· Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
J
· Terminal Connections: See Diagram
DF
L
· Marking: A80, See Page 3
C_Q1
G_Q2
S_Q2
· Ordering Information: See Page 3
Q1
· Weight: 0.006 grams (approx.)
Q2
E_Q1
B_Q1
D_Q2
SOT-363
Dim Min Max
A
0.10 0.30
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
F
0.30 0.40
H
1.80 2.20
M
J
¾
0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.25
a
0°
8°
All Dimensions in mm
Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 2)
Thermal Resistance, Junction to Ambient (Note 2)
Operating and Storage and Temperature Range
Symbol
P_d
RqJA
T_j, T_STG
Value
150
833
-55 to +150
Unit
mW
°C/W
°C
Maximum Ratings, Q1, MMBT4403 PNP Transistor Element ^{@ TA = 25°C unless otherwise specified}
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Symbol
V_CBO
V_CEO
VEBO
I_C
Value
-40
-40
-5.0
-600
Unit
V
V
V
mA
Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element ^{@ T}A ^{= 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
Drain Current (Note 2)
Continuous
Continuous @ 100°C
Pulsed
Notes: 1. No purposefully added lead.
Symbol
V_DSS
V_DGR
VGSS
ID
Value
60
60
±20
±40
115
73
800
Units
V
V
V
mA
DS30296 Rev. 7 - 2
1 of 7
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